EiceDRIVER™ 1EDBx275F is a family of single-channel isolated gate-driver ICs, designed to drive Si, SiC, and GaN power switches. 1EDBx275F is available in an 8-pin DSO package with a 4 mm input-to-output creepage distance; it provides isolation by means of on-chip coreless transformer (CT) technology.
With tight timing specifications, 1EDBx275F is designed for fast-switching medium-to-high power systems. Excellent common-mode rejection, low part-to-part skew, fast signal propagation, and small package size make 1EDBx275F a superior alternative to high-side driving solutions using optocouplers or pulse transformers.
Features:
- Single-channel isolated gate-driver
- 45 ns input-to-output propagation delay with excellent accuracy (+4/-6 ns)
- Separate low-impedance source and sink outputs
- Fast clamping of parasitics-induced output overshoots under UVLO conditions
- Fast start-up times and fast recovery after supply glitches
- Optimized UVLO levels (4 V, 8 V, 12 V, 15 V) for Si, SiC and GaN transistors
- High common mode transient immunity (CMTI > 300 V/ns)
- Available in 8-pin 150mil DSO package
- Fully qualified according to JEDEC for industrial-grade applications
Package Includes:
1 x 1EDB7275FXUMA1-INFINEON-Gate Driver, 1 Channels, High Side, MOSFET, SiC MOSFET, GaN Power Device, 8 Pins, SOIC
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